Deposition and wear resistance of composite TiBC-SiC coatings on Si wafer by thermal plasma CVD

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Abstract

Composite TiBC-SiC film coatings with various contents of SiC were deposited on Si wafer at 800°C from a mixed solution of titanium tetra-ethoxide, boron tri-ethoxide and/or hexa-methyl-disiloxane by an Ar/H 2 thermal plasma CVD. The crystalline phases (TiB2, TiC, SiC) in the coatings are identified by thin film grazing incidence X-ray diffraction. The surfaces and cross-sections of the monolithic TiBC and SiC and composite TiBC-SiC coatings are observed by scanning electron microscopy. The microstructure of a cross-section of composite TiBC-55 mol% SiC film is observed by transmission electron microscopy with EDX analysis. The wear rates of the composite TiBC-SiC film are evaluated from cross-sectional profiles of the residual wear tracks formed by ball-on-disk wear tests using SUS and alumina balls with their results correlated with the SiC content and film hardness. © 2009 The Ceramic Society of Japan.

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APA

Shimada, S., Fuji, Y., Kiyono, H., Tsujino, J., & Yamazaki, I. (2009). Deposition and wear resistance of composite TiBC-SiC coatings on Si wafer by thermal plasma CVD. Journal of the Ceramic Society of Japan, 117(1364), 415–420. https://doi.org/10.2109/jcersj2.117.415

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