Abstract
Abstract -- Populärvetenskaplig sammanfattning -- Preface -- Acknowledgement -- Content -- 1 History and challenges -- 2 Properties of III-nitrides -- 3 Fundamentals of GaN-based HEMT structures -- 4 MOCVD growth of GaN-based HEMT structures -- 5 Characterizations of GaN-based HEMT structures -- References -- Publications.
Cite
CITATION STYLE
APA
Chen, J.-T. (2015). MOCVD growth of GaN-based high electron mobility transistor structures. MOCVD growth of GaN-based high electron mobility transistor structures. Linköping University Electronic Press. https://doi.org/10.3384/diss.diva-117138
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