GaN nanowires decorated with Pd for methane gas sensor

Abstract

In this study, palladium (Pd)-decorated gallium nitride (GaN) nanowire have been prepared for room-temperature methane (CH4) gas sensors. The material was fabricated via MOCVD method combined with subsequent magnetron sputtering process and characterized by SEM technique. The SEM images indicate that the presence of different thickness of Pd film on the surface of the nanowires. When used for methane gas sensing, with the assistance of UV light, the 10nm Pd-decorated GaN nanowire sensor has the highest response to 200ppm methane, which were about 2 times higher than that of pure GaN samples. What's more, 10nm Pd-decorated GaN sensor also has the lowest detection limit (20ppm) and the shortest response time (<10s). Thus, the application of Pd-GaN nanowire as methane gas sensor will have board prospects.