Resistive switching characteristics of Pt/TiO2/Al structure under optical illumination

Abstract

Modulation in resistance switching characteristics of TiO2 thin film fabricated on aluminum substrate is investigated under optical illumination. The average thickness of TiO2 thin film is about 200 nm. The current-voltage characteristics of the Pt/TiO2/Al structure show a good rectifying property with unipolar resistive switching behavior. This resistive switching behavior is observed to be modulated by optical illumination. Photo-carriers generated during optical illumination shifts the set and reset voltage to lower values. This study is helpful for exploring optical effect in metal oxides as multifunctional materials and its applications in non-volatile memory devices.