HfOχ bipolar resistive memory with robust endurance using AlCu as buffer electrode

Abstract

A novel method of fabricating HfOχ-based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (>105 cycles), robust data retention at high temperature, and fast operation speed (> 50 ns), have been demonstrated. The resistive memory based on AlCu/ HfOχ stacked layer in this letter shows promising application in the next generation of nonvolatile memory. © 2009 IEEE.