Multiple transitions in permalloy half-ring wires with finite-size effect

Abstract

Six permalloy (Py) half-rings with finite-size from 120 nm to 360 nm were connected in series on five corners. The magnetization reversal processes were investigated by the measurement of anisotropic magnetoresistance (AMR). The number of switching jumps in the AMR loops, from zero to five, varied with the longitudinal applied field. These discrete jumps resulted from domain wall (DW) nucleating and depinning on the corners. The larger external field had a fewer number of jumps in the magnetoresistance (MR) curve. This reproducible and particular response of the domain wall device in the half-ring wires pattern might be one of the new promising magnetoelectronic devices.