Effect of hydrogenation on Al-related photoluminescence in 6H-SiC

Abstract

Interaction of hydrogen with Al acceptors in SiC is investigated using low-temperature photoluminescence (PL) spectroscopy. Hydrogenation is performed in hydrogen plasma using a standard inductively coupled plasma etching system. Appearance of H-related PL peaks after hydrogenation is accompanied with a significant reduction in relative intensity of Al bound exciton (Al-BE) PL. A gradual quenching of the remaining Al-BE photoluminescence is observed in hydrogenated samples under excitation with above band gap light, resulting in a complete disappearance of Al-BE PL emission. High-temperature annealing completely restores the shape of the PL spectrum to its prehydrogenation form. © 2001 American Institute of Physics.