Abstract
Electrical properties of BaTiO3‐based capacitors are investigated. A new model is developed to explain the frequency response of the impedance of grain‐boundary barrier layer (GBBL) capacitors. This model takes into consideration the dipole polarization effect and provides a simple and effective approach to evaluate the performance of GBBL capacitors with various dopants and sintering in different atmospheres. When sintered in a reducing atmosphere, doped BaTiO3 exhibits a higher dielectric constant and a relatively stable dieletric constant with respect to the frequency response and temperature dependence. Also, smaller grain resistivity is obtained with addition of both Dy2O3 and Nb2O5. Copyright © 1989, Wiley Blackwell. All rights reserved
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Chiou, B. ‐S, Lin, S. ‐T, Duh, J. ‐G, & Chang, P. ‐H. (1989). Equivalent Circuit Model in Grain‐Boundary Barrier Layer Capacitors. Journal of the American Ceramic Society, 72(10), 1967–1975. https://doi.org/10.1111/j.1151-2916.1989.tb06008.x
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