The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)

Abstract

This paper discusses recent progress in and challenges of threshold voltage control for advanced high-k/metal-gated (HKMG) devices. It presents the impact on threshold voltage (Vt) control of incorporating La and Al into HKMG devices. A dipole moment model explaining Vt tuning of HfSiON/metal-gated MOSFETs is proposed. In addition, a dual channel scheme that allows La2O3 capping in NMOS and a SiGe channel in PMOS to achieve acceptable Vt for HKMG CMOS devices will be discussed. Also shown is the impact of the robustness of the SiO2/Si interface on the HKMG MOSFET Vt-equivalent oxide thickness (EOT) roll-off. Finally, techniques to improve the interface quality of a HKMG stack will be discussed. © 2009 Elsevier B.V. All rights reserved.