Characterisation of CVD diamond with high concentrations of nitrogen for magnetic-field sensing applications

Abstract

Ensembles of nitrogen-vacancy (NV) centres in diamond are a leading platform for practical quantum sensors. Reproducible and scalable fabrication of NV-ensembles with desired properties is crucial, as is an understanding of how those properties influence performance. This work addresses these issues by characterising nitrogen-doped diamond produced by the chemical vapour deposition (CVD) method across a range of synthesis conditions. This is shown to produce material with widely differing absorption characteristics, which is linked to the level of defects other than substitutional nitrogen (NS) and NV. In such material, the achievable concentration of NV− ([NV−]) is found to be influenced by the as-grown properties. At the 10–20 ppm level for [NS], the production of CVD-grown material with strain levels sufficient not to limit achievable device sensitivity is demonstrated and a favourable product of [NV−] and T2∗ is obtained. Additionally, reproducible properties over a batch of 23 samples from a single synthesis run are achieved, which appears promising for the scalability efforts underway in this area of research.