Parametric optimization of lateral NIPIN phototransistors for flexible image sensors

Abstract

Curved image sensors, which are a key component in bio-inspired imaging systems, have been widely studied because they can improve an imaging system in various aspects such as low optical aberrations, small-form, and simple optics configuration. Many methods and materials to realize a curvilinear imager have been proposed to address the drawbacks of conventional imaging/optical systems. However, there have been few theoretical studies in terms of electronics on the use of a lateral photodetector as a flexible image sensor. In this paper, we demonstrate the applicability of a Si-based lateral phototransistor as the pixel of a high-efficiency curved photodetector by conducting various electrical simulations with technology computer aided design (TCAD). The single phototransistor is analyzed with different device parameters: the thickness of the active cell, doping concentration, and structure geometry. This work presents a method to improve the external quantum efficiency (EQE), linear dynamic range (LDR), and mechanical stability of the phototransistor. We also evaluated the dark current in a matrix form of phototransistors to estimate the feasibility of the device as a flexible image sensor. Moreover, we fabricated and demonstrated an array of phototransistors based on our study. The theoretical study and design guidelines of a lateral phototransistor create new opportunities in flexible image sensors.