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Cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 K

Applied Physics Letters (1975) 27(7) 403-405
DOI: 10.1063/1.88492
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Abstract

Distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinement have been successfully operated under dc bias up to room temperature. They lased in a single longitudinal mode with a threshold current density of 0.94 kA/cm2 at 170 K and 3.5 kA/cm2 at 300 K.

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Nakamura, M., Aiki, K., Umeda, J., & Yariv, A. (1975). Cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 K. Applied Physics Letters, 27(7), 403–405. https://doi.org/10.1063/1.88492

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