Ultrashallow junctions in Si using decaborane? A molecular dynamics simulation study

Abstract

The feasibility of using decaborane B10H14, for the manufacture of shallow junctions in Si is investigated by means of molecular dynamics simulations. Bombardment energies of 1, 2, and 4 keV are investigated and the simulations run for up to 7 ps in order to ascertain the implantation profiles of the B atoms, the whereabouts of the H from the impacted molecule and the damage to the lattice. The simulations show that if a small binding energy of the B atom in the Si lattice is assumed then most of the B from the cluster is implanted. The implantation distributions are flatter with depth than those for single B interactions and the surface layers undergo damage and amorphisation in the proximity of the impact. © 1998 American Institute of Physics.