Label-Free Detection of BRAF V599E Gene Mutation Using Side-Gated Nanowire Field Effect Transistors

Abstract

The demand for ultrasensitive and reliable sensors for biomols. detection and disease diagnostics has increased in modern-day scientific research. Semiconductor nanowire field-effect transistors (FET) can be used as biochem. sensors for ultrasensitive, selective, and label-free detection of low ion concns., mols., proteins, DNA, and viruses. Thus, most devices with back gates for these nanowires are limited to large-scale fabrication and integration. In this study, a novel side-gated silicon nanowire (SiNW) FET was fabricated using complementary metal oxide semiconductor compatible technol. The side-gated SiNW-FET was employed as a biosensor for ultrasensitive detection of BRAFV599E gene mutation. Specific elec. performance was obsd. when the nanowire surface was functionalized using complementary and 1-base mismatch target DNA. A nanowire-based sensor was used to distinguish between the complementary and 1-base mismatch DNA through the dehybridization process at different melting temps. Results demonstrated that the side-gated SiNW-FET device could act as a label-free, highly sensitive, and selective biosensor for gene mutation sensing. Our approach offers the possibility of multidetection of the biol. species with local control elements in a single integrated circuit. [on SciFinder(R)]