Photoluminescence study of CdTe/ZnTe self-assembled quantum dots

Abstract

Molecular beam epitaxy (MBE) grown CdTe strain-induced self-assembled quantum dots (SAD) on ZnTe are investigated based on optical properties. The temperature and growth interrupt conditions for the MBE process are established to form the SADs. The enhancement of the optical recombination quantum efficiency in SADs is confirmed by the temperature dependence of the photoluminescence full width at half maximum, energy, and intensity.