All Silicon Microdisplay Fabricated Utilizing 0.18 μm CMOS-IC With Monolithic Integration

Abstract

A low voltage all silicon microdisplay is presented based on MOS-like gate-control all-Silicon light-emitting diode (LED) in standard 0.18 μm complementary metal oxide semiconductor (CMOS) technology. The MOS-like LED is designed under a PN alternate structure with polysilicon gate control electrode for high luminous intensity and low operating voltage. The microdisplay device is fabricated based on the LED as pixel units. The size of the proposed microdisplay device is 6.2 mm × 5.0 mm with a about 368 mW/mm2 luminous intensity at the stable operating voltage of 1.8 V.