The gate tunable 2D pn junction driven out-of-equilibrium

Abstract

We have investigated the electrostatics and electronic transport of the gate tunable 2D pn junction by implementing a comprehensive physics-based simulator that self-consistently solves the 2D Poisson's equation coupled to the drift-diffusion current and continuity equations. The simulator considers the strong influence of the out-of-plane electric field through the gate dielectric and the presence of interface states. The impact of parameters such as gate capacitance, energy gap, and interface trap states density have been considered to model properties such as the depletion width, rectification factor, and depletion and diffusion capacitances. The present work opens the door to a wider exploration of potential advantages that gate tunable 2D pn junctions could bring in terms of figures of merit.