Simulations for thermal analysis of MOSFET IPM using IMS substrate

Abstract

The project was focused on the thermal aspects of the new IPM module design. The investigations were aimed to estimate the influence of the particular design of the MOSFET transistor location versus the steady-state thermal feature of the considered IPM and to determinate its thermal impedance as well as to evaluate its equivalent RC network (ladder) model. It required working out the 3-D thermal model of the considered system that was used in numerical simulations and next, tested with commercial software, ANSYS 5.7 based on Finite Element Method (FEM). © Springer-Verlag Berlin Heidelberg 2003.