Resistive switching kinetics of parylene-based memristive devices with Cu active electrodes

Abstract

The temporal characteristics of the resistive switching process in parylene-based memristive devices with Cu electrodes are studied. It was found that the switching time of the structures is hundreds of nanoseconds at switching voltages less than 2 V. The median value of the estimated energyconsumption does not exceed 3 nJ. Thus, it was shown that parylene-based memristors are effective in neuromorphic computing systems, including those trained by bio-inspired rules such as memristive STDP. The possibility of further reduction of the switching energies down to picojoules when the size of the memristors is reduced to 50x50 µm2 (in crossbar architecture) is noted. Biocompatibility and scalability of the devices is also promising in the creation of energy-efficient wearable systems. The obtained results can be useful for further study of parylene-based memristors, in particular, for developing models of their performance.