Synthesis of diamond crystal growth on tungsten carbide inserts by HFCVD using various seeding powders

Abstract

The hot filament chemical vapor deposition (HFCVD) process is used to synthesize diamond crystals on cemented carbide (WC–Co) SPUN inserts. Diamond (Dia.), carbon (GC-glassy spherical form), iridium (Ir), molybdenum (Mo), palladium (Pd), platinum (Pt), tungsten (W), and tantalum (Ta) powders were used as seeding materials for crystal growth. Scanning electron microscopy (SEM) data revealed the development of a few diamond crystals in platinum, iridium, and tungsten powders. The seeding with carbon, tantalum, and diamond powders formed clustered microcrystalline diamond (MCD) crystals, although other powders produced discrete crystals. Tantalum and diamond-seeded powders produced the most significant number and size of crystals. According to micro-Raman spectroscopy (µ-RS), tantalum powder had the lowest ID/IG ratio and the most excellent sp3 bonding. X-ray diffraction (XRD) revealed the maximum diamond intensity in the (111) plane. According to atomic force microscopy (AFM), diamond and molybdenum powders had the largest grains, whereas tantalum powder had the smallest root mean square roughness value with a homogeneous grain distribution. The Vickers microhardness (VHN) test confirmed the highest hardness value for diamond and tantalum seeded powder coatings with the least amount of radial cracking. Field emission scanning electron microscopy (FESEM) revealed that both powders had higher film thickness values.