Formation of the Al-GaSb(110) interface

Abstract

We have used Auger electron spectroscopy and electron energy loss spectroscopy to study at room temperature aluminium adsorption on GaSb(110) surfaces. For this, samples have been submitted to increasing metallic exposure corresponding to thicknesses in the range 0.4-140 Å. Two successive behaviours were observed. Up to 10 Å, the growth involved a layer-by-layer mechanism. Between 10 and 140 Å, the results can be explained by the formation of aluminium islands on top of the initial continuous film. Annealing causes important modifications of the Auger spectra even at temperatures as low as 50°C. © 1998 Elsevier Science B.V. All rights reserved.