Comparative Analysis of MOSFET and FinFET

Abstract

The current chapter offers a thorough comparison of the two well-known transistor designs, MOSFET and FinFET, which have revolutionized integrated circuit architecture. The chapter offers a thorough investigation of the core ideas, design factors, and operational traits between the two transistor techniques. It describes the development of MOSFET technologies and how it has significantly advanced current electronics. The drawbacks of conventional MOSFET scaling are brought to light, necessitating the use of FinFET and other innovative transistor architectures. FinFET, revealing its ground-breaking design with a channel shaped like a fin and many gates. It examines the special operational benefits of FinFET, such as greater device scalability, improved electrostatic control, and lower leakage current. The article also looks at difficulties in designing and producing FinFETs, such as increasing process complexity and unpredictability. The outcomes of MOSFET and FinFET are compared and contrasted over a number of important factors. These factors involve switching speed, noise immunity, power efficiency, power dissipation, leakage current, on-state current, subthreshold slope, threshold voltage control, and device scaling.