Weak localization and quantum interference in Sn doped In2O 3 nanowires

Abstract

In this work we studied the electron transport in metallic Sn doped In 2O3 (ITO) nanowires in order to quantify and identify the electron dephasing mechanisms in the samples. At high temperatures, the electron-phonon scattering is observed confirming the expected metallic behavior. Magnetoresistance data provided evidences of quantum interference effects which was found in agreement with the 1D weak localization theory. © 2009 American Institute of Physics.