Residual stress distribution in the direction of the film normal in thin diamond films

Abstract

The residual stress distribution in the direction of the film normal in thin diamond films deposited on Si substrate was evaluated together with the distribution of Young's modulus. The films were deposited on the substrate by the microwave chemical vapor deposition method. It was observed that the curvature of the diamond films delaminated from the Si substrate is functionally dependent on the film thickness. Although the average intrinsic stress was tensile, it was found that a huge compression concentrates in the very small region near the adhesion interface. This finding shows evidence that something happens on the interface, which is absolutely different from the subsequent process of film growth.