Drive current boosting using pocket implant near to the strained SiGe/Si source with single-metal/dual-metal double-gate tunnel field-effect transistor

Abstract

Heterojunction double-Gate tunnel field-effect transistor based on strained SiGe/Si source and pocket implant near to the source is simulated in TCAD using the non-local band-to-band tunnelling (BTBT) model. The dual-metal gate (DMG) and single-metal gate (SMG) technique were discussed separately for the proposed device structure. The use of strained SiGe/Si source and halo/pocket implant near to the source to boost the ION state current in SMG-DGTFET. The DMG technique results in a better performance when compared to SMG-DGTFET, and as in DMG, we have two different metals which are used at the gate to control the different portions of the transfer characteristics. The SMG and DMG-DGTFET are analysed for different dielectrics as well. The ION=IOFF ratio comes out to be in the ratio of 4.12; 1010 in SMG-DGTFET, and the average subthreshold slope also improves from 41.1 mV/decade in SMG-DGTFET to 23.7 mV/decade inDMG-DGTEFT. All the simulations were done in Synopsys TCAD for a channel length of 25 nm using the non-local tunnelling model.