Highly reliable operation of indium tin oxide AIGalnP orange ight-emitting diodes

Abstract

Indium-tin oxide (ITO) transparent conducting films with a low resistivity of 2-3 ËŸ 104Ω-cm have been introduced as a window layer in (Al0.7Ga0 7)0.5ln0.5P/(Al0.1Ga0.9)0.5.In0.5P double-heterostructure orange light-emitting diodes to obtain a uniform spatial distribution of the emission light, a good device performance and high reliability. An output power of 450μW at 20mA corresponding to an external quantum efficiency of 1.1% for the 620 nm emission can be achieved. © 1994, IEE. All rights reserved.