Intraband Exciton Dynamics of n-Doped Silver Selenide Quantum Dots

Abstract

AgxSe (x > 2) colloidal quantum dots (CQDs) have recently emerged as a promising environmentally friendly material contender for mid- and long-wave infrared optoelectronics, leveraging their intraband transition (1Se-1Pe). However, multicarrier interactions in CQDs, particularly Auger recombination, have profound implications on the optoelectronic properties of the materials and their potential in device applications. Understanding the intraband excited-state dynamics in n-doped AgxSe is therefore essential for the assessment and successful implementation of this material platform in devices. We, herein, investigate the carrier dynamics of AgxSe in both solution and thin-film states using a femtosecond mid-infrared transient absorption spectrometer. Our observations reveal that the multicarrier Auger process depends on the degree of doping in AgxSe CQDs and accelerates when the Fermi energy (EF) level approaches the 1Pe state. The calculated intraband Auger coefficients (CA) are measured to be on the order of ∼10-28 cm6 s-1, significantly larger compared to analogous n-doped HgS/Se CQDs.