Enhanced ferroelectric and piezoelectric properties in doped lead-free (Bi0.5Na0.5)0.94 Ba0.06 TiO 3 thin films

Abstract

Doping effects with respect to the electrical properties of morphotropic phase boundary (Bi0.5Na0.5)0.94 Ba 0.06 TiO3 thin films epitaxially grown on CaRuO 3 electroded (LaAlO3) 0.3 (Sr2 AlTaO 6) 0.35 (001) substrates were investigated. Substantial enhancement of ferroelectricity and piezoelectricity has been achieved in La+Ce codoped films with a remanent polarization Pr of 29.5 μC/ cm2 and a remanent piezoelectric coefficient d33,f of 31 pm/V, whereas Mn doping seems more favorite to reduce the leakage current by two order of magnitude. Both doped films exhibited diodelike I-V characteristics, which are correlated with resistance switching effect. © 2010 American Institute of Physics.