Abstract
The influence of silicon on the growth of epitaxial rhombohedral boron nitride (r-BN) films deposited on sapphire (0001) by chemical vapor deposition is investigated. X-ray diffraction measurements and secondary ion mass spectrometry show that silicon favors the formation of r-BN and is incorporated into the film. © 2013 The Royal Society of Chemistry.
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CITATION STYLE
APA
Chubarov, M., Pedersen, H., Högberg, H., & Henry, A. (2013). On the effect of silicon in CVD of sp2 hybridized boron nitride thin films. CrystEngComm, 15(3), 455–458. https://doi.org/10.1039/c2ce26423d
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