Thermal conductivity variation of Bi2Te3 nanofilm with interfacial defects using molecular dynamics

3Citations
Citations of this article
7Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

In this study, the thermal conductivity and thermal boundary resistance (TBR) of Bi2Te3 nanofilms with different interfacial defects were investigated using nonequilibrium molecular dynamics simulations, and the effects of temperature, defects (step junctions and grooves), and interfaces (amorphous and telluride) were assessed. The results show a strong temperature dependence of the thermal conductivity for Bi2Te3 nanofilms with an ideal structure; moreover, as the height of step-junction defects increased, the thermal conductivity decreased, exhibiting a linear dependency. In addition, the thermal conductivity gradually decreased by 36%-40% as the width of the interface defects increased. We also verified the self-assembly mechanism for nanoscale Bi2Te3 and found that the Bi2Te3-Te interface induces strong phonon scattering. In addition, the TBR decreased as the width of the amorphous or Te interface increased. Thus, interfacial defects in Bi2Te3 nanofilms affect the thermal conductivity and TBR. The results of this study may be useful for optimizing Bi2Te3 thermoelectric devices in the future.

Cite

CITATION STYLE

APA

Lai, T. Y., Fang, T. H., & Huang, C. C. (2019). Thermal conductivity variation of Bi2Te3 nanofilm with interfacial defects using molecular dynamics. AIP Advances, 9(7). https://doi.org/10.1063/1.5110937

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free