High-gain and high-bandwidth AlGaN/GaN high electron mobility transistor comparator with high-temperature operation

Abstract

This paper presents the dc and dynamic characterizations of a GaN-based voltage comparator, fabricated with monolithic integration of enhancement-mode (E-mode) and depletion-mode (D-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The comparator features high gain (> 31 dB) and wide bandwidth (> 4 MHz), and small propagation delay time (< 20 ns) over a wide temperature range up to 250 °C. Its dc gain is still 27.1 dB at 400 °C. These results demonstrate the potential of the AlGaN/GaN HEMT technology for mixed-signal integrated circuits used in GaN power electronics that promises high-voltage, high-current, and high-temperature operation. © 2011 The Japan Society of Applied Physics.