Combined effect of system-generated electromagnetic pulse and dose rate on BJT

Abstract

Using the calculation program for the semiconductor device's system-generated electromagnetic pulse (SGEMP) and dose rate combined effect, we analysed the combined effect of the cable's BJT load when the cable was radiated by X-ray. This paper presents the feature and the law of the combined effect of SGEMP and dose rate. Under the combined effect, the reverse breakdown voltage reduced as the quantities of carrier in the BJT increased rapidly. The damage of BJT occurs more easily under the combined effect than under the SGEMP effect or the dose rate effect. The calculation program for the SGEMP and dose rate effect could be used for analysing the effect mechanism and law of other semiconductor devices.