Abstract
We analyse the extraction of photons emitted from single InAs quantum dots embedded in planar microcavities. The structures are designed to achieve broad-band operation and high-collection efficiency from a device requiring straightforward fabrication, even with electrical contacts. The designs consist of a quantum dot in a GaAs membrane with asymmetric top and bottom mirrors and a top-side solid immersion lens (SIL). Four separate cases are considered in our design: a GaAs membrane only (case 1), GaAs membrane with a glass SIL on top (case 2), a GaAs membrane with a glass SIL on top and a back mirror consisting of Au (case 3), a GaAs membrane with a glass SIL on top of a distribute Bragg reflector mirror and Au back mirror (case 4). Both finite difference time domain and analytical simulations are used to calculate the electric field, power density, and far-field radiation pattern. For optimized structures (case 4), we obtain significant extraction efficiencies (>50) with modest Purcell enhancements (∼20) and a large spectral full-width-half-maximum (>100 nm). The high-extraction efficiency, broad-band operation, and facile fabrication make the proposed structures promising for realistic quantum dot devices. © 2014 AIP Publishing LLC.
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CITATION STYLE
Ma, Y., Kremer, P. E., & Gerardot, B. D. (2014). Efficient photon extraction from a quantum dot in a broad-band planar cavity antenna. Journal of Applied Physics, 115(2). https://doi.org/10.1063/1.4861723
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