Abstract
New original circuit model for the power device based on interactive coupling of electrical and thermal properties is described. The thermal equivalent network for a three-dimensional heat flow is presented. Designed electro-thermal MOSFET model for circuit simulations with distributed properties and three-dimensional thermal equivalent network is used for simulation of multipulse unclamped inductive switching (UIS) test of device robustness. The features and the limitations of the new model are analyzed and presented. © Published under licence by IOP Publishing Ltd.
Cite
CITATION STYLE
Chvála, A., Donoval, D., Marek, J., Príbytný, P., Molnár, M., & Mikolasek, M. (2014). Three-dimensional electro-thermal verilog-A model of power MOSFET for circuit simulation. In Journal of Physics: Conference Series (Vol. 494). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/494/1/012006
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.