Photovoltage and photocurrent spectroscopy of luminescent porous silicon

Abstract

Measurements of photocond., photovoltage and photoluminescence spectra of porous silicon/c-Si structures are carried out. The shape of the photocond. and photovoltage spectra is caused mainly by bulk properties of porous silicon. Two components of the photovoltage spectral dependence caused by porous silicon are obsd. On the contrary, the one photocond. component is revealed. Also, the photocond. spectrum shape depends on the value of the bias voltage and differ from the photovoltage spectrum in the short-wave region. The obtained results are explained within the model where the por-Si is considered as composite system of crystallites embedded in amorphous matrix of silicon compds. [on SciFinder (R)]