A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device

Abstract

With the advent of artificial intelligence (AI) in computational devices technology, various synaptic array architectures are proposed for neuromorphic computing applications. Among them, the non-volatile memory (NVM) architectures are very promising for their small cell size, ultra-low energy consumption, and capability for large parallel data processing through 3D configurations capable of multilevel signal processing. Herein, the viability of such magnetic tunnel junction (MTJ)-based synaptic devices via fabrication and characterization of multi-junction spintronic devices is demonstrated, with the experimental results supported through micromagnetic simulations.