Microstructure and properties of multilayer-derived tungsten silicide

Abstract

In metallization, peeling and oxidation of tungsten silicide are the most serious problems of tungsten rich silicide. In this study, multilayer-derived silicon rich tungsten silicide with the silicon film on the outermost surface is investigated to avoid these problems. The dependence of sheet resistance on the annealing conditions is studied. X-ray diffraction results indicate that silicide formation is nearly completed after 30 min annealing at 750° C. Microstructures of silicide and polycides are investigated by electron microscopy. Silicide deposited on SiO2 has smaller grains that deposited on poly-Si. A resistivity of 60 μΩ-cm is obtained for multilayer-derived WSi2.3. © 1987 The Metallurgical of Society of AIME.