Abstract
Electromigration tests are conducted on High Pb, SnAg, SnPb and Cu Pillar Flip Chip bumps to determine the relative performance of different bump metallurgies on current carrying capacity. A special test vehicle was designed and tests are being conducted for three (3) different current levels at three (3) temperature conditions. Although complete data is not available at the time of writing this paper, the data to date is summarized in this paper.
Cite
CITATION STYLE
Syed, A., Dhandapani, K., Nicholls, L., Moody, R., Berry, C. J., & Darveaux, R. (2010). Flip chip bump electromigration reliability: A comparison of Cu Pillar, High Pb, SnAg, and SnPb bump structures. In International Conference and Exhibition on Device Packaging 2010, Held in Conjunction with the Global Business Council, GBC 2010 Spring Conference (Vol. 2, pp. 1222–1249).
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
