Reliable Resistive Switching Behaviour of Ag/Ta2O5/Al2O3/p++-Si Memory Device

Abstract

In this article, we demonstrate a resistive switching memory device based on a very simple bilayer structure of Ag/Ta2O5/Al2O3/p++-Si. As compared to a single-layer based device of Ag/Ta2O5/p++-Si, a uniform bistable resistive switching behaviour with on/off ratio over 104 demonstrates that the Ag/Ta2O5/Al2O3/p++-Si device could be a promising candidate for the memory device, in which the total resistance could also be adjusted by modifying the applied electric field. In the low voltage sweeping region, gradual increase and/or decrease in resistance can also be observed, indicating that an analog type of switching behaviour similar to the first demonstrated memristor device has also been observed in the newly made device. This study could open up new ways for the design of multi-functional devices which are promising for memory and neuromorphic computing applications.