Characterization of the off-state current of an elevated-metal metal-oxide thin-film transistor

Abstract

Without employing an unconventional thin-film transistor (TFT) with excessively wide effective channel width and offset source/drain electrodes, an improved methodology and circuit are applied to measuring the off-state current (Ioff ) of elevated-metal metal-oxide (EMMO) TFTs built on indium-gallium-zinc oxide, with or without fluorination. Ioff of around mid-11−11 A/μm has been obtained, with the value slightly lower for an EMMO TFT with a fluorinated channel.