First-Principles Prediction of New 2D p-SiPN: A Wide Bandgap Semiconductor

9Citations
Citations of this article
6Readers
Mendeley users who have this article in their library.

Abstract

Pentagonal two-dimensional ternary sheets are an emerging class of materials because of their novel characteristic and wide range of applications. In this work, we use first-principles density functional theory (DFT) calculations to identify a new pentagonal SiPN, p-SiPN, which is geometrically, thermodynamically, dynamically, and mechanically stable, and has promising experimental potential. The new p-SiPN shows an indirect bandgap semiconducting behavior that is highly tunable with applied equ-biaxial strain. It is mechanically isotropic, along the x-y in-plane direction, and is a soft material possessing high elasticity and ultimate strain. In addition, its exceptional anisotropic optical response with strong UV light absorbance, and small reflectivity and electron energy loss make it a potential material for optoelectronics and nanomechanics.

Cite

CITATION STYLE

APA

Bhandari Sharma, S., Qattan, I., KC, S., & Abedrabbo, S. (2022). First-Principles Prediction of New 2D p-SiPN: A Wide Bandgap Semiconductor. Nanomaterials, 12(22). https://doi.org/10.3390/nano12224068

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free