Rectification in three-terminal graphene junctions

Abstract

Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change in the rectification sign. At a bias <20 mV and at a temperature below 4.2 K the sign and the efficiency of the rectification are governed by universal conductance fluctuations. © 2010 American Institute of Physics.