Study of graphene growth by HWC-VHF-PECVD method using annealed Ag films

Abstract

In this research we report a study of graphene growth using annealed silver film via hot wire cell very high frequency plasma enhanced chemical vapor deposition (HWC VHF PECVD) method with 20 sccm flow rate of methane at relatively low substrate temperature (275 °C). The silver metal catalyst-thin film was prepared by low pressure physical vapor deposition (PVD) method and the structure was optimized by annealing treatment at 600 °C in two conditions at 30 and 60 minutes. The XRD investigation shows the annealed silver film at 60 minutes has the best structure with maximum intensity located at (111) direction and 2θ = 38.12° position while interplane distance at d = 0.23?nm and lattice parameter a = 0.408?nm. UV-Vis measurement shows the maximum peak absorbance of pristine silver was at 411?nm while the annealing treatment for both did not significantly change the peaks position. On the other hand graphene deposited on the silver film have two peaks in which belong to carbon (λ graph = 400.58) and silver (λ Ag = 420.92 nm). Characterization of the graphene on silver was measured by Raman spectroscopy for three conditions (20, 10 and 8 watts).