Thermoelectric properties of the narrow-gap semiconductors FeSb2 and RuSb2: A comparative study

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Abstract

We report on the thermoelectric properties of FeSb2 in comparison with the iso-structural RuSb2, both of which are narrow-gap semiconductors. Significant difference in the thermoelectric properties is found between the two systems. Despite similar charge carrier concentrations, the thermoelectric power factor differs as much as two orders of magnitude whereas the thermal conductivity is of the same order. The thermopower of strongly correlated FeSb2 seems to possess a huge contribution due to correlated electrons that are absent in RuSb2. © 2009 IOP Publishing Ltd.

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Sun, P., Oeschler, N., Johnsen, S., Iversen, B. B., & Steglich, F. (2009). Thermoelectric properties of the narrow-gap semiconductors FeSb2 and RuSb2: A comparative study. Journal of Physics: Conference Series, 150. https://doi.org/10.1088/1742-6596/150/1/012049

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