Abstract
Ion implanted planar p-n junctions are important for silicon carbide discrete devices and integrated circuits. Conversion to p-type of n-type 6H-SiC was observed for the first time using boron implantation. Diodes were fabricated with boron implants at 25 and 1000°C, followed by 1300°C post-implant annealing in a furnace. The best diodes measured at 21°C exhibited an ideality factor of 1.77, reverse bias leakage of 10-10 A/cm 2 at -10 V, and a record high (for a SiC-implanted diode) breakdown voltage of -650 V.
Cite
CITATION STYLE
Ghezzo, M., Brown, D. M., Downey, E., Kretchmer, J., & Kopanski, J. J. (1993). Boron-implanted 6H-SiC diodes. Applied Physics Letters, 63(9), 1206–1208. https://doi.org/10.1063/1.109772
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