III-Nitride QD Lasers

Abstract

III-Nitrides QD lasers are studied in detail. Two types of QD structures are considered, GaN/Al x Ga 1-x N/AlN and In x Ga 1-x N/ In 0.04 Ga 0. 96 N /GaN. Effects of: QD size; QD and WL composition; and doping are studied through the calculations of gain, threshold current, and intensity modulation bandwidth. It is shown that GaN QDs are less sensitive to size fluctuations. Bandwidth increases with doping and reducing QD size. The study covers approximately (300-600 nm) wavelength range.