Abstract
Samples with arrays of GaAs/AlGaAs quantum rings (QRs) of different shapes were grown by molecular beam epitaxy in droplet epitaxy mode. Photoluminescence (PL) spectra of the samples were measured at 20 - 90 K and 300 K, intense peaks attributed to the QR layers were observed. The peaks were identified by comparison of as-grown and selectively etched samples and by the calculation of the ground state energy for charge carriers in GaAs QRs. FWHM narrowing with the temperature increase was observed below 70 K.
Cite
CITATION STYLE
Sibirmovsky, Y. D., Vasil’Evskii, I. S., Vinichenko, A. N., Eremin, I. S., Kolentsova, O. S., Kargin, N. I., & Strikhanov, M. N. (2015). Temperature dependence of photoluminescence of GaAs/AlGaAs quantum rings. In Journal of Physics: Conference Series (Vol. 643). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/643/1/012073
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
