Journal Article

Semiconductors for optical memories

Current Opinion in Solid State and Materials Science (2002) 6(4) 271-279
DOI: 10.1016/S1359-0286(02)00122-5
7Citations
Citations of this article
13Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Optical nano-structures can be produced in semiconducting materials by exposure to focused beams of energetic ions. By proper choice of implantation conditions, pixel densities reach ultra-high values of 1010 -1012 pix /cm2 . Silicon and diamond constitute excellent recording media with practically unlimited life times of the implanted patterns. Thus, ionography with these media provides a perfect tool for safe mass storage of archival data. © 2002 Elsevier Science Ltd. All rights reserved.

Cite

CITATION STYLE

APA

Kalbitzer, S. (2002). Semiconductors for optical memories. Current Opinion in Solid State and Materials Science, 6(4), 271–279. https://doi.org/10.1016/S1359-0286(02)00122-5

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free