Investigation of Zn1-xCdxO films bandgap and Zn1-xCdxO/ZnO heterojunctions band offset by x-ray photoelectron spectroscopy

Abstract

A series of Zn1-xCdxO thin films have been fabricated on sapphire by pulsed-laser deposition (PLD), successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn1-xCdxO films, x-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis), and x-ray photoelectron spectroscopy (XPS) are employed to characterize the films in detail. The XRD pattern indicates that the Zn1-xCdxO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration (x) according to the (ahn)2-hn curve. Furthermore, the band offsets of Zn1-xCdxO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.