Record high mobilities for regioregular poly(3-octylthiophene)

  • Sauvé G
  • Liu J
  • Zhang R
  • et al.
0Citations
Citations of this article
5Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Regioregular poly(3-alkylthiophene)s are promising candidates for plastic electronics. In particular, poly(3-hexylthiophene) (P3HT) has attracted considerable interest due to its excellent field effect mobility. However, not much attention has been given to poly(3-alkylthiophene)s with longer alkyl side chains, mainly because a few studies reported that longer side chain length was detrimental to field effect mobility. However, these past studies used untreated SiO2 as the gate dielec. and com. available polymers synthesized by the Rieke method. Here, all polymers tested were synthesized in house using our quasi-living GRIM method to yield well-defined clean polymers. For our first study, we synthesized P3HT and regioregular poly(3-octylthiophene) (P3OT), both with a high mol. wt. (Mn of 40kDa and 35kDa, resp.). Regioregular P3HT required some sonication to dissolve in chloroform, whereas P3OT dissolved readily in chloroform at room temp. Hole mobility was measured using bottom-contact geometry, with SiO2 as gate dielec. The SiO2 surface was either untreated, or chem. treated with octyltrichlorosilane. Av. mobility on untreated SiO2 was 0.09 Cm2/Vs for P3HT and 0.03 Cm2/Vs for P3OT. Av. mobility on OTS-8 treated SiO2, on the other hand, was 0.13 Cm2/Vs for P3HT and 0.19 Cm2/Vs for P3OT. The OTS-8 treatment therefore dramatically improved the mobility of P3OT. Both polymers had a max. mobility of about 0.2 Cm2/Vs for channel lengths ≥10 μm, and a mobility of 0.22 Cm2/Vs was obtained several times for P3OT. To our knowledge, this is by far the highest mobility reported for P3OT. [on SciFinder(R)]

Cite

CITATION STYLE

APA

Sauvé, G., Liu, J., Zhang, R., Kowalewski, T., & McCullough, R. D. (2007). Record high mobilities for regioregular poly(3-octylthiophene). In Organic Field-Effect Transistors VI (Vol. 6658, p. 665810). SPIE. https://doi.org/10.1117/12.735695

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free